Fabrication and properties of a solar-blind ultraviolet photodetector based on Si-doped β-Ga2O3 film grown on p-Si (111) substrate by MOCVD
| Autor: | Xin Dong, Ying Wang, Daqiang Hu, Yandong Wang, Jingzhi Yin, Jiang Zhu, Weiliang Huan |
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| Rok vydání: | 2021 |
| Předmět: |
Materials science
business.industry Photodetector Heterojunction Substrate (electronics) Chemical vapor deposition Photodetection medicine.disease_cause Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Responsivity medicine Optoelectronics Metalorganic vapour phase epitaxy Electrical and Electronic Engineering business Ultraviolet |
| Zdroj: | Optik. 245:167708 |
| ISSN: | 0030-4026 |
| DOI: | 10.1016/j.ijleo.2021.167708 |
| Popis: | A solar-blind ultraviolet photodetector based on p-Si/n-β-Ga2O3:Si heterojunction, using the Si-doped β-Ga2O3 as the n-type layer, was fabricated successfully by metal-organic chemical vapor deposition (MOCVD). The current-voltage and photoresponse characteristics of photodetector were investigated. The fabricated p-Si/n-β-Ga2O3:Si heterojunction photodetector exhibited typical rectification behavior and good solar-blind ultraviolet photoresponse. Sensitive photodetection of current at the reverse bias voltage and stable on-off switching performance were achieved. The photodetector showed a responsivity of 3.76 A/W and a photo-to-dark current ratio of 37.9 under 254 nm illumination. The rise time constants ( τ r 1 , τ r 2 ) and the decay time constants ( τ d 1 , τ d 2 ) of the photodetector under 254 nm illumination at the reverse voltage of − 20 V were estimated to be (0.30 s, 0.76 s) and (0.15 s, 6.15 s), respectively. The fabricated p-Si/n-β-Ga2O3:Si heterojunction photodetector displayed relatively faster response speed compared to the reported photodetectors based on p-Si/undoped β-Ga2O3 heterojunction. The results indicate that photodetectors based on p-Si/n-β-Ga2O3:Si heterojunction have potential development for the high-performance solar-blind ultraviolet photodetectors. |
| Databáze: | OpenAIRE |
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