Low‐loss AlGaAs optical rectangular waveguides at 830 nm

Autor: M. K. Hibbs‐Brenner, C. T. Sullivan
Rok vydání: 1990
Předmět:
Zdroj: Applied Physics Letters. 56:1529-1531
ISSN: 1077-3118
0003-6951
DOI: 10.1063/1.103165
Popis: Optical channel waveguides with rectangular cross section and losses less than 0.1 dB/cm at 830 nm have been fabricated in AlGaAs heterostructures grown by organometallic vapor phase epitaxy. The modal attenuation correlates with surface morphology for all waveguide widths and with sidewall roughness for narrow channels. Surface morphology and modal attenuation improve when a superlattice buffer layer is incorporated into the structure. The loss is also reduced when the arsenic source (arsine) is purified in‐line.
Databáze: OpenAIRE