Investigation of semiconductor structures using backscattering of MeV particles
| Autor: | A. Turos, A. Barcz, L. Wieluński |
|---|---|
| Rok vydání: | 1975 |
| Předmět: |
Elastic scattering
Radiation Materials science Silicon Scattering business.industry chemistry.chemical_element Alpha particle Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Charged particle Semimetal Semiconductor Nuclear Energy and Engineering chemistry Impurity Radiology Nuclear Medicine and imaging Atomic physics business |
| Zdroj: | The International Journal of Applied Radiation and Isotopes. 26:227-232 |
| ISSN: | 0020-708X |
| DOI: | 10.1016/0020-708x(75)90155-6 |
| Popis: | Applications of backscattering of 1–2 MeV α-particles to the analysis of a variety of silicon structures have been investigated. This technique allows detection of medium- and heavy- mass impurities in light matrices, as well as non-destructive in-depth analysis of surface layers. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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