| Popis: |
The paper describes used a beam of negative ions Au- and performed high-temperature annealing for recrystallization structure of X-ray amorphous AlN-TiB 2 -TiSi 2 , having typical dimensions of the regions near the ordering 0, 8–1 nm. Direct methods of measurement of high-resolution transmission electron microscopy, X-ray diffraction and scanning electron microscopy and X-ray microanalysis demonstrated, that thermal annealing at 1300 °C in air results to the formation of nanoscale phase of 10–15 nm AlN, AlB 2 , Al 2 O 3 and TiO 2 , and ion implantation of negative ions Au-leads to fragmentation (decrease) in sizes up to 2–5 nm nanograin with formation of nanocrystals from Au-“ball” shape in a few nm in size and formation of an amorphous oxide film in the depths (surface layer) cover by ballistic ion mixing and collision cascades. The work performed in collaboration with the National Institute for Materials Science, Tsukuba, Japan and Politecnico di Torino, Italy. |
