Prognostic methodology for remaining useful life estimation of retention loss in nanoscale resistive switching memory
| Autor: | Daniel D. Frey, Nagarajan Raghavan, Kin Leong Pey |
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| Rok vydání: | 2014 |
| Předmět: |
Logarithmic scale
Work (thermodynamics) Materials science Spectral density Condensed Matter Physics Noise (electronics) Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Resistive random-access memory Frequency domain Electronic engineering Electrical and Electronic Engineering Diffusion (business) Safety Risk Reliability and Quality Degradation (telecommunications) |
| Zdroj: | Microelectronics Reliability. 54:1729-1734 |
| ISSN: | 0026-2714 |
| DOI: | 10.1016/j.microrel.2014.07.072 |
| Popis: | Noise is a key indicator of the physical phenomenon underlying device operation, defect density and degradation trends. The analysis of noise in the frequency domain and the exponent (value of slope, α on logarithmic scale) of the power spectral density (PSD) can provide useful insight on the operating and failure mechanism of any device/system. We shall use this noise as a prognostic indicator to detect the instant at which the retention loss of a non-volatile memory device begins to occur. A qualitative perspective to prognostic management of a resistive random access memory (RRAM) device is provided in this work. Our method of detecting retention loss involves the unique observation of a slope of α = 3/2, which arises due to diffusion or ionic migration phenomenon. |
| Databáze: | OpenAIRE |
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