| Autor: |
Feby Jose, Bulusu Sravani, S. Dash, N. Ravi, A.K. Tyagi, R. Ramaseshan, Padmalochan Panda |
| Rok vydání: |
2015 |
| Předmět: |
|
| Zdroj: |
AIP Conference Proceedings. |
| ISSN: |
0094-243X |
| DOI: |
10.1063/1.4917968 |
| Popis: |
Wurtzite type AlN thin films were grown on Si (100) substrates at substrate temperatures (S.T.) varying from RT to 600 °C using DC reactive magnetron sputtering by keeping the parameters such as Ar/N2, power and target to substrate distance (TSD) constant. Evolution of preferred orientation of the deposited films was studied by GIXRD and a-axis orientation was observed at 400 °C. The residual stress measurement of these films was carried out by sin2ψ technique and they varied from tensile to compressive (R.T. to 600 °C). Highest hardness (HIT) was observed for 400 °C as 20 GPa, whereas highest modulus was observed for 600 °C as 264 GPa. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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