Formation and Properties of Locally Tensile Strained Ge Microstructures for Silicon Photonics
| Autor: | A. V. Novikov, V. A. Verbus, Aleksey Nezhdanov, D. V. Yurasov, Artem N. Yablonskiy, K. E. Kudryavtsev, N. A. Baidakova, Nikita Gusev, Aleksandr Mashin, E. E. Morozova, E. V. Skorohodov |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Silicon photonics Materials science Silicon Strain (chemistry) chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics Microstructure 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials symbols.namesake chemistry 0103 physical sciences Ultimate tensile strength symbols Composite material 0210 nano-technology Spectroscopy Luminescence Raman scattering |
| Zdroj: | Semiconductors. 52:1442-1447 |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/s1063782618110167 |
| Popis: | The formation and properties of locally tensile strained Ge microstructures (“microbridges”) based on Ge layers grown on silicon substrates are investigated. The elastic-strain distribution in suspended Ge microbridges is analyzed theoretically. This analysis indicates that, in order to attain the maximum tensile strain within a microbridge, the accumulation of strain in all corners of the fabricated microstructure has to be minimized. Measurements of the local strain using Raman scattering show significant enhancement of the tensile strain from 0.2–0.25% in the initial Ge film to ~2.4% in the Ge microbridges. A considerable increase in the luminescence intensity and significant modification of its spectrum in the regions of maximum tensile strain in Ge microbridges and in their vicinity as compared to weakly strained regions of the initial Ge film is demonstrated by microphotoluminescence spectroscopy. |
| Databáze: | OpenAIRE |
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