Comparative investigation of TaN and SiCN barrier layer for Cu/ultra low k integration

Autor:	P.D. Foo, C.Y. Li, L.Y. Yang, Dao Hua Zhang, P.W. Lu, Andrew T. S. Wee, Rong Liu
Rok vydání:	2006
Předmět:	Materials science Metals and Alloys Low-k dielectric Mineralogy Surfaces and Interfaces Dielectric Surfaces Coatings and Films Electronic Optical and Magnetic Materials Amorphous solid Barrier layer Materials Chemistry Grain boundary Thermal stability Metallizing Composite material Sheet resistance
Zdroj:	Thin Solid Films. 504:265-268
ISSN:	0040-6090
DOI:	10.1016/j.tsf.2005.09.166
Popis:	This paper reports comparative studies of TaN and SiCN as barrier for Cu-porous dielectric (k
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::45d0b4368372c92330d1c144347e20eb https://doi.org/10.1016/j.tsf.2005.09.166 Zobrazit plný text záznamu Full Text from ScienceDirect