Belt Transport CVD Processing
Autor: | Chin‐tay Shih, Chih-Yuan Lu, Ming-Kwang Lee |
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Rok vydání: | 1983 |
Předmět: |
Work (thermodynamics)
Renewable Energy Sustainability and the Environment Oxide Mineralogy Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Volumetric flow rate Wafer fabrication chemistry.chemical_compound chemistry Belt speed Materials Chemistry Electrochemistry Deposition (phase transition) Composite material |
Zdroj: | Journal of The Electrochemical Society. 130:2249-2252 |
ISSN: | 1945-7111 0013-4651 |
DOI: | 10.1149/1.2119561 |
Popis: | Belt transport CVD processing, a simple but useful technique applied widely in wafer fabrication, is evaluated in this work. An empirical relation, (Tox) (belt speed)" = K, where Tox is the oxide thickness, is established. The value ofn is found to be 1.09 experimentally and 1.0 as analyzed theoretically. A simple deposition model is discussed. The effects of belt speed on film thickness and the effects of flow rate on characteristics are also studied in detail. |
Databáze: | OpenAIRE |
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