Integration of Si and SiGe with Al2O3 (sapphire)
| Autor: | I. Lagnado, P. R. de la Houssaye |
|---|---|
| Rok vydání: | 2001 |
| Předmět: |
Materials science
Silicon Wafer bonding business.industry chemistry.chemical_element Mineralogy Context (language use) Chemical vapor deposition Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Characterization (materials science) chemistry Silicon on sapphire Sapphire Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | Microelectronic Engineering. 59:455-459 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/s0167-9317(01)00642-6 |
| Popis: | Through the characterization of structural defects in bonded silicon on sapphire handle-substrates (SOS) that develop with exposure to device processing temperatures, we have investigated and implemented a methodology to study wafer bonding reaction chemistry. In this context, we present the result and analysis of this development which provides (through LPCVD SiO2 mitigation of bond reaction-induced bubbles) the dislocation-free bonded bulk-quality thin silicon layers ( |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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