Influence of pre-etching on specific contact parameters for metal-GaN contacts
| Autor: | T. Rotter, D. Mistele, J. Aderhold, O. Semchinova, M Schauler, M Mayer, C Ahrens, Franz Eberhard, Dirk Uffmann, H. Klausing, J. Graul, Markus Kamp, J. Stemmer |
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| Rok vydání: | 1999 |
| Předmět: |
Materials science
business.industry Contact resistance technology industry and agriculture Schottky diode Condensed Matter Physics Electrical contacts Electronic Optical and Magnetic Materials Ion Sputtering Etching (microfabrication) Materials Chemistry Optoelectronics Electrical and Electronic Engineering business Ohmic contact Sheet resistance |
| Zdroj: | Semiconductor Science and Technology. 14:637-641 |
| ISSN: | 1361-6641 0268-1242 |
| DOI: | 10.1088/0268-1242/14/7/309 |
| Popis: | We report on the influence of different pre-etch methods on specific contact parameters of GaN contacts. For these investigations we used ex situ chemically assisted ion beam etching and in situ sputter etching before metal deposition. The electrical contact parameters were determined using the extended circular transmission line model (CTLM). For nitrogen as an etching gas we obtained rectifying character (Schottky) of metal-n-GaN contacts compared with mostly linear (Ohmic) behaviour for conventional etching gases such as Ar or ArCl2. We assume that a decrease of N vacancies caused by the N2 treatment is responsible for the Schottky behaviour of these contacts. Pre-etch sputtering with Ar+ ions reduces on the one hand the specific contact resistance C but on the other hand the CTLM model reveals that simultaneously the sheet resistance Rsk in the near-surface region increases. |
| Databáze: | OpenAIRE |
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