Continuous roughness characterization from atomic to micron distances: Angle-resolved electron and photon scattering
| Autor: | G.J. Pietsch, P. O. Hahn, M. Henzler |
|---|---|
| Rok vydání: | 1989 |
| Předmět: |
Range (particle radiation)
Materials science Misorientation business.industry General Physics and Astronomy Polishing Surfaces and Interfaces General Chemistry Surface finish Electron Condensed Matter Physics Atomic units Light scattering Surfaces Coatings and Films Characterization (materials science) Optics business |
| Zdroj: | Applied Surface Science. 39:457-472 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/0169-4332(89)90462-5 |
| Popis: | The roughness at the Si/SiO2 interface has been characterized by two methods independently: Spot profile analysis of LEED (SPA-LEED) provides information on an atomic scale up to lateral distances of some 100 mm, and angle-resolved light scattering (ARLS) extends the range into the region of many microns. For samples prepared at optimum by chemo-mechanical polishing the same geometric distribution of atomic steps describes the results with both methods pointing to one common mechanism of roughness production. For less optimized samples or for regularities in the micron scale due to misorientation additional information is available from light scattering. As an example, the influence of oxidation or different final polishing processes is demonstrated. |
| Databáze: | OpenAIRE |
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