An Improved I-V Model of GaN HEMT for High Temperature Applications
| Autor: | Zhen Yu Yuan, Jie Yang, Jia Di, Ning Ye, Ye Ting Jia, Hong Yuan Shen |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
Materials science
Mechanics of Materials business.industry 020209 energy Mechanical Engineering 0202 electrical engineering electronic engineering information engineering Optoelectronics General Materials Science 02 engineering and technology High-electron-mobility transistor Condensed Matter Physics business |
| Zdroj: | Materials Science Forum. 924:980-983 |
| ISSN: | 1662-9752 |
| DOI: | 10.4028/www.scientific.net/msf.924.980 |
| Popis: | The lack of the high temperature I-V model greatly restricts the application of GaN HEMT devices. In this paper, the characteristic variation of GaN HEMT device under high temperature condition is investigated, and an improved I-V characteristics model of GaN HEMT transistors over a wide temperature range from 25°C to 300°C is proposed based on the classic Statz model. The experimental results indicate that the improved spice model, by taking the self-heating effect into account, is more accurate compared to the original Statz model. The proposed I-V model should be an available tool for the simulation of GaN HEMT device in designing integrated circuits at high temperature. |
| Databáze: | OpenAIRE |
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