Apparatus for measuring resistivity and Hall coefficient of heavily doped semiconductors at high temperatures

Autor: R W Bunce, D M Rowe
Rok vydání: 1971
Předmět:
Zdroj: Journal of Physics E: Scientific Instruments. 4:902-904
ISSN: 0022-3735
DOI: 10.1088/0022-3735/4/11/027
Popis: An apparatus is described for measuring the Hall coefficient and electrical resistivity of heavily doped semiconductors over the temperature range 300-1000 K and 300-1200 K respectively. Using a simple chopped d.c. circuit the advantages of an a.c. technique are enjoyed without the use of extensive electronic equipment. Results of resistivity, Hall coefficient and mobility measurements on a hot pressed germanium-silicon specimen are given as an indication of performance.
Databáze: OpenAIRE