Apparatus for measuring resistivity and Hall coefficient of heavily doped semiconductors at high temperatures
Autor: | R W Bunce, D M Rowe |
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Rok vydání: | 1971 |
Předmět: | |
Zdroj: | Journal of Physics E: Scientific Instruments. 4:902-904 |
ISSN: | 0022-3735 |
DOI: | 10.1088/0022-3735/4/11/027 |
Popis: | An apparatus is described for measuring the Hall coefficient and electrical resistivity of heavily doped semiconductors over the temperature range 300-1000 K and 300-1200 K respectively. Using a simple chopped d.c. circuit the advantages of an a.c. technique are enjoyed without the use of extensive electronic equipment. Results of resistivity, Hall coefficient and mobility measurements on a hot pressed germanium-silicon specimen are given as an indication of performance. |
Databáze: | OpenAIRE |
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