Improvement in electrical properties of buried SiO2 layers by high‐temperature oxidation
| Autor: | M. J. Anc, H.L. Hughes, P. J. McMarr, W. A. Krull, B.J. Mrstik |
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| Rok vydání: | 1995 |
| Předmět: |
inorganic chemicals
Materials science Physics and Astronomy (miscellaneous) Silicon Inorganic chemistry technology industry and agriculture Nanocrystalline silicon Oxide chemistry.chemical_element Equivalent oxide thickness Strained silicon equipment and supplies Oxide thin-film transistor complex mixtures Monocrystalline silicon stomatognathic diseases chemistry.chemical_compound chemistry LOCOS Composite material |
| Zdroj: | Applied Physics Letters. 67:3283-3285 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.115221 |
| Popis: | The density of defects in the buried oxide of implanted oxide silicon‐on‐insulator material which cause low resistance paths between the substrate and top silicon layer has been greatly reduced by high temperature oxidation. The mechanism for this is the diffusion of oxygen through the top silicon layer to the buried oxide, where it oxidizes chains of silicon atoms. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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