Dielectric Charge Screening of Dislocations and Ionized Impurities in PbSe and MCT

Autor:	Shaibal Mukherjee, F. Zhao, Zhisheng Shi, S. L. Elizondo, Jiangang Ma, D. Li, J. P. Kar, J. Smart
Rok vydání:	2008
Předmět:	Permittivity Condensed matter physics Solid-state physics Scattering Chemistry Analytical chemistry Dielectric Electron Condensed Matter Physics Electronic Optical and Magnetic Materials Impurity Electromagnetic shielding Materials Chemistry Electrical and Electronic Engineering Dislocation
Zdroj:	Journal of Electronic Materials. 37:1411-1414
ISSN:	1543-186X 0361-5235
DOI:	10.1007/s11664-008-0418-3
Popis:	Recent advancements in IV–VI growth techniques have led to a renewed interest in using Pb1−x Sn x Se for mid infrared (mid-IR) detector fabrication. There is now a greater need for an in-depth theoretical understanding of the potential competitiveness of these material systems with Hg1−x Cd x Te (MCT) especially in regards to material defects and device performance. Herein, we calculate the shielding effects of the dielectric constant by considering the scattering of electrons due to ionized impurities and small charged dislocations. The higher dielectric constant in IV–VI materials, nearly ten times greater than that of MCT, is shown to more effectively screen out the influence of impurities.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::459bdc0af52b0664d1a4c276ef4ef351 https://doi.org/10.1007/s11664-008-0418-3 Zobrazit plný text záznamu Full text from SpringerLink