Blue-Green Light Emitting Diodes with New p-Contact Layers: ZnSe/BeTe

Autor:	Takafumi Yao, J.H. Chang, Hisao Makino, H. Wenisch, M.W. Cho
Rok vydání:	2000
Předmět:	Materials science business.industry Band gap Doping Contact resistance Green-light Electroluminescence Condensed Matter Physics Electronic Optical and Magnetic Materials law.invention law Optoelectronics business Ohmic contact Quantum well Light-emitting diode
Zdroj:	physica status solidi (a). 180:217-223
ISSN:	1521-396X 0031-8965
Popis:	We have fabricated ZnCdSe/ZnMgBeSe single quantum well (SQW) light emitting diode (LED) structures with ZnSe:N/BeTe:N p-contact layers. The electrical properties of this p-contact layer scheme were evaluated for the use in ZnSe-based II–VI LDs. The specific contact resistance for Au/p-ZnSe/p-BeTe ohmic contact layers, which was measured by the transmission line model (TLM) method, was as low as 4.2 × 10–4 Ωcm2 even without annealing when the ZnSe layer thickness is 5 nm. The composition of quaternary ZnMgBeSe was determined using a ZnBeSe/ZnMgBeSe layer structure by PL and X-ray measurements. The p-type doping property was investigated for ZnMgBeSe with different compositions, and Na–Nd drastically decreases with increasing band gap energy the same as that of the ZnMgSSe:N system. The fabricated LEDs show a strong electroluminescence under dc bias at room temperature.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4599eebf0d33d95e8c368ecd99cda9da https://doi.org/10.1002/1521-396x(200007)180:1<217::aid-pssa217>3.0.co Zobrazit plný text záznamu Plný text