Electrical stress probing recovery efficiency of 28 nm HK/MG nMOSFETs using decoupled plasma nitridation treatment
| Autor: | Mu-Chun Wang, Shun-Ping Sung, Heng-Sheng Huang, Shou-Kong Fan, Shuang-Yuan Chen, Shea-Jue Wang |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Annealing (metallurgy) business.industry Gate dielectric chemistry.chemical_element 02 engineering and technology Dielectric 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Nitrogen Surfaces Coatings and Films Threshold voltage Plasma nitridation chemistry 0103 physical sciences Optoelectronics 0210 nano-technology business Instrumentation Voltage Leakage (electronics) |
| Zdroj: | Vacuum. 153:117-121 |
| ISSN: | 0042-207X |
| DOI: | 10.1016/j.vacuum.2018.04.003 |
| Popis: | Exposing the feasible nitrogen concentration and annealing temperatures with decoupled plasma nitridation (DPN) treatment to the high-k dielectric after deposition as gate dielectric is impressive to raise the high-k value and against the gate leakage. The study not only focuses on the quality of high-k dielectric, but the reliability concern. Using the voltage stress sensing and analyzing the recovery of gate dielectric, comparing with different nitrogen concentration and different annealing temperatures is done. The consequences show the tested device with higher annealing temperature has the better performance rather than the lower one in recovery and drive current, but the worse in reliability stress, especially in threshold voltage (VT) shift. If the tested devices were under the same nitridation treatment, the performance and recovery efficiency of the tested device with the lower nitrogen concentration are better than those of the higher one, but the degradation rate is more distinct. |
| Databáze: | OpenAIRE |
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