Transient effects in rapid thermal processing
| Autor: | Stephen A. Campbell, K. L. Knutson |
|---|---|
| Rok vydání: | 1992 |
| Předmět: |
Yield (engineering)
Materials science Silicon Analytical chemistry chemistry.chemical_element Mechanics Condensed Matter Physics Industrial and Manufacturing Engineering Electronic Optical and Magnetic Materials Stress (mechanics) chemistry Rapid thermal processing Thermal Wafer Transient (oscillation) Electrical and Electronic Engineering Thermal analysis |
| Zdroj: | IEEE Transactions on Semiconductor Manufacturing. 5:302-307 |
| ISSN: | 0894-6507 |
| DOI: | 10.1109/66.175362 |
| Popis: | Using a realistic model of a rapid thermal processing chamber including Navier-Stokes calculations of the gas losses, the stresses and yield strengths of silicon wafers were determined for several linear ramp rates. It was found that the stress to yield strength ratio is a sensitive function of the ramp rate and the radiant uniformity. Radiation patterns that produce good steady-state thermal nonuniformity overheat the wafer edges during heating transients, leading to high stress levels. > |
| Databáze: | OpenAIRE |
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