Growth of quaternary InP-based materials by LP-MOVPE using TBA and TBP in N2 ambient

Autor:	Gunnar Landgren, R. Westphalen, D Keiper
Rok vydání:	2000
Předmět:	chemistry Kinetics Inorganic chemistry Materials Chemistry Analytical chemistry chemistry.chemical_element Metalorganic vapour phase epitaxy Electrical and Electronic Engineering Thin film Condensed Matter Physics Nitrogen Electronic Optical and Magnetic Materials Solid solution
Zdroj:	Journal of Electronic Materials. 29:1398-1401
ISSN:	1543-186X 0361-5235
DOI:	10.1007/s11664-000-0125-1
Popis:	We have investigated the growth of quaternary In1−xGaxAsyP1−y/InP materials using TBA and TBP in a N2 ambient. This process improves significantly the uniformity of In1−xGaxAs/InP QWs whereas it does not improve the quaternary Q(1.3)/InP uniformity compared to the conventional process utilizing AsH3 and PH3 in H2. The effect on the x and y uniformity for different combinations of the group-V precursors TBA, TBP, PH3, and AsH3 with the carrier gases H2 and N2 is evaluated. Advantages with the TBA/TBP/N2 process are discussed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4570d75a375012f90b05401ffb60f164 https://doi.org/10.1007/s11664-000-0125-1 Zobrazit plný text záznamu Full text from SpringerLink