MOCVD Growth of High Quality InGaAs HEMT Layers on Large Scale Si Wafers for Heterogeneous Integration With Si CMOS
Autor: | Sachin Yadav, Annie Kumar, Eugene A. Fitzgerald, David Kohen, Kwang Hong Lee, Soo Jin Chua, Kenneth Eng Kian Lee, Riko I Made, Xuan Sang Nguyen, Xiao Gong |
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Rok vydání: | 2017 |
Předmět: |
010302 applied physics
Materials science Condensed matter physics business.industry Transconductance Doping 02 engineering and technology High-electron-mobility transistor 021001 nanoscience & nanotechnology Condensed Matter Physics Epitaxy 01 natural sciences Industrial and Manufacturing Engineering Electronic Optical and Magnetic Materials Gallium arsenide Barrier layer chemistry.chemical_compound chemistry 0103 physical sciences Optoelectronics Metalorganic vapour phase epitaxy Electrical and Electronic Engineering 0210 nano-technology business Indium gallium arsenide |
Zdroj: | IEEE Transactions on Semiconductor Manufacturing. 30:456-461 |
ISSN: | 1558-2345 0894-6507 |
DOI: | 10.1109/tsm.2017.2756684 |
Popis: | We report on the growth of In0.30Ga0.70As channel high electron mobility transistor (HEMT) epi-layers on a 200-mm Si substrate by metal-organic-chemical-vapor-deposition. The HEMT layers were grown on the Si substrate by using a ~3- ${\mu }\text{m}$ thick epitaxial buffer composing of a Ge layer, a GaAs layer, and a compositionally graded and strain relaxed InAlAs layer. The optimized epitaxy has a threading dislocation density of less than $2 {\times } 10^{{7}}$ cm−2 and a root mean square surface roughness of ~6.7 nm. The device active layers include a ${ {\delta } }$ -doped InAlAs bottom barrier, a ~15-nm thick InGaAs channel, a ~8-nm InGaP top barrier layer and a heavily doped InGaAs contact layer. MOSHEMTs with channel length down to 130 nm were fabricated. The devices achieve a peak transconductance of ${\sim }450 ~{\mu }\text{S}/ {\mu }\text{m}$ at ${V} _{ D}$ of 0.5 V. The peak effective mobility ( ${\mu }_{\text {eff}}$ ) in a device with a channel length of 20 $ {\mu }\text{m}$ device channel was ~3700 cm2/ $\text{V} {\cdot }\text{s}$ . |
Databáze: | OpenAIRE |
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