Monolithic integration of optoelectronic devices with reactive matching networks for microwave applications
| Autor: | J.C. Renaud, D. Rondi, Didier Decoster, P. Hirtz, S. Maricot, B. de Cremoux, Robert Blondeau, Jean-Pierre Vilcot |
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| Rok vydání: | 1992 |
| Předmět: |
Materials science
business.industry Impedance matching Integrated circuit Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention Photodiode Semiconductor laser theory Gallium arsenide chemistry.chemical_compound chemistry law Optoelectronics Insertion loss Electrical and Electronic Engineering business Monolithic microwave integrated circuit Microwave |
| Zdroj: | IEEE Photonics Technology Letters. 4:1248-1250 |
| ISSN: | 1941-0174 1041-1135 |
| DOI: | 10.1109/68.166957 |
| Popis: | Microwave impedance matching networks have been, for the first time, monolithically integrated with GaInAs p-i-n photodiodes and GaInAsP buried ridge stripe structure lasers ( lambda =1.3 mu m), both on a semi-insulating InP substrate. The microwave power transfer optical links were compared using matched and unmatched devices. Compared to an unmatched link, an improvement of 11.4 dB at 5.6 GHz (600 MHz bandwidth) is obtained for the totally matched one; this result corresponds quite well to the theoretical prediction (12 dB at 6 GHz). > |
| Databáze: | OpenAIRE |
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