Vertical Ferroelectric HfO2 FET based on 3-D NAND Architecture: Towards Dense Low-Power Memory

Autor:	Mihaela Popovici, Simone Lavizzari, J. Van Houdt, Milan Pešić, Goedele Potoms, Guido Groeseneken, A. Subirats, K. Banerjee, Antonio Arreghini, L. Di Piazza, Farid Sebaai, S. R. C. McMitchell, Karine Florent
Rok vydání:	2018
Předmět:	010302 applied physics Hardware_MEMORYSTRUCTURES Materials science business.industry Electrical engineering NAND gate 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Ferroelectricity Power (physics) Reliability (semiconductor) Hardware_GENERAL 0103 physical sciences Memory window Field-effect transistor 0210 nano-technology business
Zdroj:	2018 IEEE International Electron Devices Meeting (IEDM).
Popis:	A vertical ferroelectric HfO 2 field effect transistor based on 3-D macaroni NAND architecture is reported for the first time. Up to 2 V memory window was obtained after the application of 100 ns program/erase pulses. Flash-like endurance of 104 cycles is reported and first reliability assessments were performed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::455e8b9fa844fd83b67780217f47f967 https://doi.org/10.1109/iedm.2018.8614710 Zobrazit plný text záznamu