| Autor: |
R. W. Armstrong, K. A. Green, W. T. Beard, X.J. Zhang |
| Rok vydání: |
1994 |
| Předmět: |
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| Zdroj: |
Proceedings of 1994 IEEE International Reliability Physics Symposium RELPHY-94. |
| DOI: |
10.1109/relphy.1994.307803 |
| Popis: |
X-ray diffraction topography is the name given to several X-ray diffraction techniques which permit the topography of planes within a crystal to be examined. The topographic techniques based on Bragg diffraction from a periodic crystal are extremely sensitive to imperfections and strains in the crystal, since any alteration to the interplanar spacing of the crystal will effect a corresponding change in the Bragg diffraction condition. Line modified asymmetric crystal topography (LM-ACT) is one such topographic technique which shows particular promise in the field of microelectronics. The LM-ACT system is designed with low angular divergence in the X-ray probe beam which allows details of device geometries on the order of microns to be resolved. A major advantage of LM-ACT is that it is a nondestructive technique. This paper describes the LM-ACT system and shows how the system has been applied to the study of integrated circuits after specific processing steps as well as with the final product. > |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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