Ultra-Shallow Junction Formation by Monolayer Doping Process in Single Crystalline Si and Ge for Future CMOS Devices

Autor:	Henry J. H. Chen, Tseung-Yuen Tseng, Yao-Jen Lee, Shang Shiun Chuang, Kuo-Hsing Kao, Michael I. Current, Po Jung Sung, Ta Chun Cho
Rok vydání:	2017
Předmět:	010302 applied physics Materials science Doping Nanotechnology 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Electronic Optical and Magnetic Materials CMOS Scientific method 0103 physical sciences Shallow junction Monolayer 0210 nano-technology
Zdroj:	ECS Journal of Solid State Science and Technology. 6:P350-P355
ISSN:	2162-8777 2162-8769
DOI:	10.1149/2.0011707jss
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::454f40956fff25b811da197e0cc25fcc https://doi.org/10.1149/2.0011707jss Zobrazit plný text záznamu