Scale up aspects of directional solidification and Czochralski silicon growth processes in traveling magnetic fields
| Autor: | Torunn K. Ervik, M. Czupalla, Natasha Dropka, F.M. Kiessling |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Silicon Grashof number chemistry.chemical_element 02 engineering and technology Forcing (mathematics) Mechanics 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Magnetic field Inorganic Chemistry chemistry Magnet 0103 physical sciences Electromagnetic shielding Materials Chemistry 0210 nano-technology Dimensionless quantity Directional solidification |
| Zdroj: | Journal of Crystal Growth. 451:95-102 |
| ISSN: | 0022-0248 |
| Popis: | We performed 3D simulations of directional solidification (DS) and Czochralski (Cz) silicon growth processes in traveling magnetic fields (TMFs) and verified them with the experimental data that were available. Particularly, we studied silicon DS growth in real G1, G2 and G5 size setups and Cz growth in 6″ and 24″ crucibles in furnaces provided with KRISTMAG® heater magnet modules (HMMs). TMFs were used for a solid/liquid interface shaping and for a melt stirring. Based on our simulation findings, we discussed scale up challenges and proposed a method for safe upscaling. The method related all present driving forces using dimensionless numbers: Grashof (Gr), Stephan (Ste), Reynolds (Re), Shielding (S) and magnetic forcing number (F). |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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