| Autor: |
Jie Liu, Zhen-Lei Yang, Xiaohui Wang, Yunfei En, Bin Li, Bin Wang, Lei Zhifeng, Zhang Zhangang, Chen Hui |
| Rok vydání: |
2015 |
| Předmět: |
|
| Zdroj: |
2015 IEEE Radiation Effects Data Workshop (REDW). |
| DOI: |
10.1109/redw.2015.7336734 |
| Popis: |
Single event effects (SEE) in two commercial-off-the-shelf (COTS) Ferroelectric Random Access Memory (FeRAM) technologies were investigated by heavy ions and pulsed laser irradiation. At least six SEE types were observed. The majority of the errors were caused by anomalies in the peripheral circuit, which was confirmed by the mirror SRAM technique, non-volatile test mode, and the detailed error information. Single event upset, single event functional interrupt and single event latchup cross sections were reported, with weak dependence on the supply voltage. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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