Magnetic Tunnel Junctions: Laser Annealing Versus Oven Annealing
| Autor: | Maria A. Hoffmann, Apoorva Sharma, Mathias Müller, Horst Exner, Nicole Kohler, Dietrich R. T. Zahn, Sandra Busse, Georgeta Salvan, Stefan E. Schulz, Patrick Matthes |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Fabrication Materials science Magnetoresistance Annealing (metallurgy) business.industry Laser Magnetic hysteresis 01 natural sciences Electronic Optical and Magnetic Materials law.invention Condensed Matter::Materials Science Magnetization Exchange bias law Condensed Matter::Superconductivity 0103 physical sciences Optoelectronics Wafer Electrical and Electronic Engineering business |
| Zdroj: | IEEE Transactions on Magnetics. 55:1-4 |
| ISSN: | 1941-0069 0018-9464 |
| Popis: | The performance of CoFeB/MgO tunnel junctions is strongly dependent on an annealing step at the end of the fabrication process to first, set a reference magnetization through the exchange bias effect and second, to crystallize the MgO/CoFe layers while boron diffuses out, in order to maximize the magnetoresistance ratio. In this regard, a laser-induced annealing process presents several advantages against traditional oven annealing techniques, providing a scalable approach with no limitations regarding the defined reference magnetization that can be aligned in different directions on a wafer. This paper concentrates on the mechanisms and dependences of laser annealing on the magnetic properties in comparison to the standard vacuum oven annealing, providing a first insight for the applicability of laser annealing for CoFeB-/MgO-based magnetic tunnel junctions with all concomitant needs. |
| Databáze: | OpenAIRE |
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