High-Brightness Spin-Polarized Electron Source Using Semiconductor Photocathodes
| Autor: | Tomohiro Nishitani, Kazuya Motoki, Takashi Meguro, Yuji Suzuki, Masao Tabuchi, Yoshikazu Takeda |
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| Rok vydání: | 2009 |
| Předmět: |
Physics
Physics and Astronomy (miscellaneous) Physics::Instrumentation and Detectors business.industry Superlattice Energy level splitting General Engineering General Physics and Astronomy Electron Photoelectric effect Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Photocathode Condensed Matter::Materials Science Semiconductor Electron affinity Optoelectronics Astrophysics::Earth and Planetary Astrophysics Atomic physics business Electronic band structure |
| Zdroj: | Japanese Journal of Applied Physics. 48:06FF02 |
| ISSN: | 1347-4065 0021-4922 |
| Popis: | We developed AlGaAs photocathodes with low electron affinity for long negative electron affinity (NEA) lifetime. AlGaAs photocathodes achieved 10 times longer NEA lifetime than conventional NEA-GaAs photocathodes. We estimated the appropriate superlattice structure for small conduction mini band width, high density of state in the conduction band and high splitting energy between the heavy- and light-hole bands by theoretical energy band calculation. We conclude that the AlGaAs–GaAs superlattice semiconductor is a suitable NEA-GaAs photocathode that not only has acceptable NEA lifetime but also fulfills the requirements of small energy spread of photoelectrons, high quantum yield and highly spin-polarized electrons. |
| Databáze: | OpenAIRE |
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