| Popis: |
Summary The proposed work deals with rapid thermal processing of ionic boron, implanted in phosphorus-doped Cz-(100) silicon substrates through protecting oxide films, with different technological parameters. After implantation, the samples were rapidly thermally annealed at temperatures ranging from 900 to 1100 °C, in argon ambient gas, for different annealing durations. The rapid thermal annealings (RTA) are carried out too, for some samples, after oxide mask removing. The total boron profiles, before and after annealing steps, in the SiO 2 /monocrystalline silicon systems were determined using Secondary Ion Mass Spectrometry (SIMS). Using a background concentration, the junction depth in the substrate has been investigated under various annealing treatments. The diffusion process kinetic of implanted boron into oxide and monocrystalline silicon during rapid thermal treatments has been investigated too. |
