Impacts of Threshold Voltage Design for Monolithic 3D 6T SRAM with Si and InGaAs-n/Ge-p Devices considering Interlayer Coupling

Autor:	C.T. Chuang, K.C. Yu, C.H. Yu, P. Su, V.P.H. Hu
Rok vydání:	2015
Předmět:	Coupling Materials science business.industry Optoelectronics Static random-access memory business Threshold voltage
Zdroj:	Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials.
DOI:	10.7567/ssdm.2015.ps-3-10
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::451a0abeecfbd2a9bfa7402ec5ce1a03 https://doi.org/10.7567/ssdm.2015.ps-3-10 Zobrazit plný text záznamu