An Integrated Dual-Mode CMOS Power Amplifier With Linearizing Body Network
| Autor: | Seunghoon Kang, Songcheol Hong, Taehwan Joo, Gwanghyeon Jeong |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
Engineering
business.industry Transconductance Amplifier 020208 electrical & electronic engineering RF power amplifier Electrical engineering Power bandwidth 020206 networking & telecommunications 02 engineering and technology Power factor Logic gate Hardware_INTEGRATEDCIRCUITS 0202 electrical engineering electronic engineering information engineering Power semiconductor device Electrical and Electronic Engineering business Common gate |
| Zdroj: | IEEE Transactions on Circuits and Systems II: Express Briefs. 64:1037-1041 |
| ISSN: | 1558-3791 1549-7747 |
| Popis: | A dual-mode radio frequency CMOS power amplifier (PA) for Internet of Things application is presented, which is integrated with the other circuits in a 55-nm bulk CMOS process. The low-power mode is achieved by reducing the number of turn-on power transistors, which are also used for linearization. The PA has a gain control scheme that functions by controlling the transconductance ( ${g_{m}}$ ) of the driver stage. A simple body network is introduced to common gate power transistors to improve the linearity of the PA. It is measured with 802.11n 64-quadrature-amplitude-modulation (MCS7) signal and shows a maximum average power of 16 dBm with a supply current of 222 mA under an error-vector-magnitude of −27 dB, which is packaged in a QFN 5 ${\times } \,\, 5$ mm. |
| Databáze: | OpenAIRE |
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