Green luminescence efficiency in gallium phosphide
| Autor: | D R Wight |
|---|---|
| Rok vydání: | 1977 |
| Předmět: |
Acoustics and Ultrasonics
business.industry Nitrogen doping Condensed Matter Physics Quantitative classification Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention chemistry.chemical_compound chemistry law Gallium phosphide Valence band Radiative transfer Optoelectronics business Luminescence Recombination Light-emitting diode |
| Zdroj: | Journal of Physics D: Applied Physics. 10:431-454 |
| ISSN: | 1361-6463 0022-3727 |
| DOI: | 10.1088/0022-3727/10/4/010 |
| Popis: | The present understanding of the operation of green-emitting GaP LEDs is reviewed. All existing visible LED devices which are made in III-V compound semiconductors are inefficient. In green-luminescent GaP this inefficiency is becoming understood, and quantitative analyses of the important mechanisms are described. The radiative processes include free-exciton and bound-exciton recombination which are important in p-type and n-type material with and without nitrogen doping, but in all materials the recombination is dominated by non-radiative processes which have proved to be elusive and difficult to eliminate. Particular emphasis is therefore placed on recent advances in the quantitative classification of these dominant non-radiative processes in n-type material. These are: (1) recombination at deep defect levels positioned approximately 0.75 eV from the valence band, (2) diffusion-limited recombination at dislocations, and (3) surface and interface recombination. |
| Databáze: | OpenAIRE |
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