A new precursor for the chemical vapor deposition of tantalum nitride films
| Autor: | Yongqiang Wang, Seigi Suh, Jean-Sébastien M. Lehn, Paul A. W. van der Heide, David M. Hoffman |
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| Rok vydání: | 2004 |
| Předmět: |
Materials science
Inorganic chemistry Tantalum Analytical chemistry chemistry.chemical_element General Chemistry Chemical vapor deposition Nitride Rutherford backscattering spectrometry chemistry.chemical_compound Transition metal X-ray photoelectron spectroscopy Tantalum nitride chemistry Oxidation state Materials Chemistry |
| Zdroj: | Journal of Materials Chemistry. 14:3239 |
| ISSN: | 1364-5501 0959-9428 |
| DOI: | 10.1039/b408180c |
| Popis: | A new precursor system for the deposition of tantalum nitride films has been developed. The tantalum(IV) complexes Ta(NEt2)2Cl2(p-Me2Npy)2 and Ta(NEt2)2(NCy2)2 were synthesized and their structures were determined by X-ray crystallography. Ta(NEt2)2Cl2(p-Me2Npy)2 has an octahedral structure with trans chloride and cis amido ligands, and Ta(NEt2)2(NCy2)2 has a distorted tetrahedral geometry. Tantalum nitride films were prepared from Ta(NEt2)2(NCy2)2 and ammonia at 340 °C using aerosol-assisted chemical vapor deposition. The films on glass had resistivities of 2.5 ± 0.1 × 105 μΩ cm. Rutherford backscattering spectrometry, forward recoil spectrometry, and X-ray photoelectron spectroscopy data suggest the films have a composition of approximately TaN1.5H0.3–0.5. The X-ray photoelectron spectroscopy data also indicate that the average tantalum oxidation state is +4 and that each hydrogen atom in the film is associated with two nitrogen atoms on average. The films were a barrier to diffusion between copper and silicon at 500 °C for one hour. The results of this study suggest that the oxidation state of the metal in the precursor controls the oxidation state of the metal in the film, and thereby the film stoichiometry and properties. |
| Databáze: | OpenAIRE |
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