A Hot‐Wall Low‐Pressure Reactor for Selective Silicon Epitaxy: Reactor Design and Experimental Results
| Autor: | Carl Galewski, William G. Oldham |
|---|---|
| Rok vydání: | 1992 |
| Předmět: |
Hydrogen
Silicon Dopant Renewable Energy Sustainability and the Environment Pressure reactor technology industry and agriculture chemistry.chemical_element Mineralogy Crystal growth Chemical vapor deposition equipment and supplies Condensed Matter Physics Epitaxy complex mixtures Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry Chemical engineering Materials Chemistry Electrochemistry Thin film |
| Zdroj: | Journal of The Electrochemical Society. 139:543-548 |
| ISSN: | 1945-7111 0013-4651 |
| DOI: | 10.1149/1.2069253 |
| Popis: | A tubular hot-wall silicon epitaxial reactor operating at reduced pressure is described. It has been constructed by modifying a commercial low-pressure chemical vapor deposition furnace and is proposed as a potentially cost-effective means of depositing selective epitaxial silicon layers. Defect-free selective epitaxial layers are grown at temperatures as low as 820 o C, following a bake in hydrogen at 900 o C. The lower growth rate in a hot-wall system is found to cause abrupt dopant transitions to be less steep by factor of two in comparison to a cold-wall reactor operating at the same temperature |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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