Sacrificial Structure for Effective Sapphire Substrate Liftoff Based on Photoelectrochemical Etching
| Autor: | Chia-Ying Su, Ting-Ta Chi, Chih-Chung Yang, Yean-Woei Kiang, Chieh Hsieh, Chi-Ming Weng |
|---|---|
| Rok vydání: | 2015 |
| Předmět: |
Materials science
business.industry Gallium nitride Surface finish Epitaxy Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention chemistry.chemical_compound chemistry Etching (microfabrication) law Optoelectronics Wafer Electrical and Electronic Engineering business Layer (electronics) Diode Light-emitting diode |
| Zdroj: | IEEE Photonics Technology Letters. 27:770-773 |
| ISSN: | 1941-0174 1041-1135 |
| DOI: | 10.1109/lpt.2015.2392108 |
| Popis: | The photoelectrochemical (PEC) liftoff results and the performances of fabricated vertical light-emitting diodes (LEDs) among four samples of different PEC etching sacrificial structures are compared. With a dopant-graded n-GaN sacrificial layer, the PEC liftoff time is decreased. With an n-AlGaN etching-stop layer, the roughness of PEC-etching surface is significantly reduced for simplifying the following device process. Illuminated by an ultraviolet LED array at 365 nm in emission wavelength, the PEC liftoff of a 2-in wafer with device isolation can be completed in 25 min. The performances of the fabricated vertical LEDs with different sacrificial structures are similar. |
| Databáze: | OpenAIRE |
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