Effects of a predeposited boron layer during the epitaxial growth of Ge on CaF2

Autor:	H.‐Y. Liu, L. K. Magel, J. M. Anthony, C.‐C. Cho
Rok vydání:	1993
Předmět:	Crystallography Physics and Astronomy (miscellaneous) Chemistry Mineralogy chemistry.chemical_element Crystal growth Germanium Thin film Boron Epitaxy Layer (electronics) Surface energy Molecular beam epitaxy
Zdroj:	Applied Physics Letters. 63:3291-3293
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.110178
Popis:	Using a thin predeposited B layer prior to the epitaxial growth of Ge on CaF2, we have obtained significantly improved Ge crystalline quality and surface morphology for Ge/CaF2/Si(111) and Ge/CaF2/Si(100) structures. Although B acts as a surfactant in suppressing island formation, it does not migrate to the growth front during Ge growth, which was widely observed in the surfactant‐assisted epitaxial growth of Ge on Si. The B predeposit also prevents Ca from migrating to the Ge surface, and promotes A‐type epitaxy of Ge(111) when Si(111) substrates are used.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::44efad5d348a1753bdf09d5ef518c9ff https://doi.org/10.1063/1.110178 Zobrazit plný text záznamu