Effects of RTA on the Properties of SBNO Thin Film

Autor:	Jin-Sa Kim
Rok vydání:	2012
Předmět:	Materials science Annealing (metallurgy) Sputtering Dielectric loss Dielectric Sputter deposition Thin film Rapid thermal annealing Composite material Voltage
Zdroj:	Journal of the Korean Institute of Electrical and Electronic Material Engineers. 25:926-929
ISSN:	1226-7945
DOI:	10.4313/jkem.2012.25.11.926
Popis:	The (SBNO) thin films were deposited on Si substrate by RF magnetron sputtering method at of substrate temperature. And the SBNO thin films were annealed at using RTA (rapid thermal annealing). The grain of SBNO thin films were increased with the increase of annealing temperature. The dielectric constant (100) of SBNO thin film was obtained by RTA above . The voltage dependence of dielectric loss showed a value within 0.03 in voltage ranges of -5~+5 V. Also, the dielectric constant characteristics showed a stable value with the increase of frequency.
Databáze:	OpenAIRE
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