Feasibility Study of Semifloating Gate Transistor Gamma-Ray Dosimeter

Autor:	Ying Wang, Zhi-Qiang Xiang, Fei Cao, Hai-fan Hu
Rok vydání:	2015
Předmět:	Physics Dosimeter business.industry Transistor Gamma ray Electronic Optical and Magnetic Materials law.invention Threshold voltage law Absorbed dose Optoelectronics Electrical and Electronic Engineering business Sensitivity (electronics) Diode Dark current
Zdroj:	IEEE Electron Device Letters. 36:99-101
ISSN:	1558-0563 0741-3106
DOI:	10.1109/led.2014.2379674
Popis:	The feasibility study of semifloating gate (SFG) transistor dosimeter consisting a large area p-i-n diode between floating gate and drain region is described. No bias is applied during irradiation. The SFG is charged via the diode when exposed to gamma rays, and reset with the diode positively biased. A comprehensive device simulation that includes the mechanism of charge collection, the operation of device’s threshold voltage ( $V$ th) reading, and the effect of diode dark current have been carried out with sentaurus TCAD. As a result, high linear dependence of the $V$ th on the absorbed dose of ionizing radiation is observed with a sensitivity of 65.8 mV/Gy, which suggests that this device could be used as a sensitive gamma-ray dosimeter.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::44d324e77ff611baad92b66d9339ad1c https://doi.org/10.1109/led.2014.2379674 Zobrazit plný text záznamu