Single-Source Precursors to Niobium Nitride and Tantalum Nitride Films

Autor:	Kumudini C. Jayaratne, Charles H. Winter, James W. Proscia
Rok vydání:	1993
Předmět:	chemistry.chemical_compound Crystallography Materials science Niobium nitride chemistry Tantalum nitride Tantalum Niobium chemistry.chemical_element Nitride Atmospheric temperature range Thin film Dichloromethane
Zdroj:	MRS Proceedings. 327
ISSN:	1946-4274 0272-9172
DOI:	10.1557/proc-327-103
Popis:	Herein we report our efforts to prepare new precursors to niobium nitride (NbN) and tantalum nitride (TAN, Ta3N5) thin films. Treatment of MC15 (M = Nb, Ta) with tertbutylamine in benzene solvent affords complexes of the formula [MCI2 (NtBu)(NHtBu)(NH2tBu)]2. The niobium complex [NbC12(NtBu)(NHtBu)- (NH2tBu)]2 affords NbN films on glass substrates between 500-600 °C, while the tantalum analog [TaC12(NtBu)(NHtBu)(NH2tBu)]2 gives films of Ta3N5 in this temperature range. Treatment of MCI5 (M = Nb, Ta) with 1,1-dimethylhydrazine in dichloromethane solvent affords complexes of the formula [MC12(NNMe2)(NHNMe2)(NH2NMe2)]n. These hydrazido complexes afford cubic MN films upon glass substrates at ≥400°C. Analyses of the films are presented.
Databáze:	OpenAIRE
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