Photochemical Bonding of Aligned Silica Microspheres by F2-Laser-Induced Chemical Vapor Deposition
Autor: | Narumi Inoue, JaeBong Cho, Masayuki Okoshi |
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Rok vydání: | 2007 |
Předmět: |
Materials science
Physics and Astronomy (miscellaneous) General Engineering Analytical chemistry General Physics and Astronomy Infrared spectroscopy Chemical vapor deposition Laser Fluence law.invention chemistry.chemical_compound Silicone chemistry X-ray photoelectron spectroscopy law Irradiation Refractive index |
Zdroj: | Japanese Journal of Applied Physics. 46:6658-6662 |
ISSN: | 1347-4065 0021-4922 |
DOI: | 10.1143/jjap.46.6658 |
Popis: | Aligned fused silica (SiO2) microspheres 2.5 µm in diameter were photochemically bonded with SiO2 by 157 nm F2-laser-induced chemical vapor deposition with a gaseous silicone ([SiO(CH3)2]n) source for optical waveguide applications. The refractive index of the deposited SiO2 could be closely adjusting by the single-pulse fluence and irradiation time of an F2 laser, as well as the refractive index of SiO2 to that of silica microspheres, i.e., 1.45 at 633 nm wavelength. The deposited material was carbon-free SiO2, as analyzed by X-ray photoelectron spectroscopy and IR spectroscopy. The factors of the refractive index change induced by varying single-pulse laser fluence and laser irradiation time were discussed. Under the laser irradiation conditions used, the deposited SiO2 successfully filled gaps between silica microspheres with the change in base pressure induced by nitrogen gas purge. |
Databáze: | OpenAIRE |
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