| Popis: |
Modelling turns out to be a very powerful tool to adjust the ill-defined values of some parameters occurring in Cu 2 S-CdS solar cells. A FORTRAN program for analysis of these cells has been implemented and the theoretical results obtained are compared with the experimental characteristics, which allows one to obtain the parameter values that best fit the model. Moreover, this technique allows one to give more information on carrier transport phenomena that occur near the junction and to clarify the contribution of holes to the total photovoltaic current. Finally, the role of the “spike” of potential that appears in the energy diagram chosen is pointed out. |
