Al, B, and Ga ion-implantation doping of SiC
| Autor: | Mulpuri V. Rao, Thirumalai Venkatesan, Michael A. Derenge, R. D. Vispute, Evan M. Handy, O. W. Holland, Kenneth A. Jones, Peter H. Chi |
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| Rok vydání: | 2000 |
| Předmět: |
Materials science
Doping Analytical chemistry chemistry.chemical_element Mineralogy Condensed Matter Physics Acceptor Electronic Optical and Magnetic Materials Ion Secondary ion mass spectrometry Ion implantation chemistry Materials Chemistry Wafer Graphite Electrical and Electronic Engineering Gallium |
| Zdroj: | Journal of Electronic Materials. 29:1340-1345 |
| ISSN: | 1543-186X 0361-5235 |
| Popis: | Aseries of single energy Al, B, and Ga ion implants were performed in the energy range 50 keV to 4 MeV into 6H-SiC to characterize the implant depth profiles using secondary ion mass spectrometry (SIMS). From the implant depth profiles empirical formulae were developed to model the range statistics as functions of ion energy. Multiple energy implants were performed into 6H- and 4H-SiC and annealed with both AlN and graphite encapsulants to determine the ability of the encapsulants to protect the implants from out-diffusion and redistribution. Al and Ga were thermally stable, but B out-diffused even with AlN or graphite encapsulation. Electrical activation was determined by Hall and capacitance-voltage measurements. An acceptor substitutional concentration of 7×1016 cm−3 was achieved for 1×1017 cm−3 Al implantation. |
| Databáze: | OpenAIRE |
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