An 8kb spin-orbit-torque magnetic random-access memory
| Autor: | Fang-Ming Chen, Yao-Jen Chang, Shan-Yi Yang, Shyh-Shyuan Sheu, Yi-Hui Su, Hsin-Tsun Wu, Yu-Chen Hsin, Guan-Long Chen, SK Ziaur Rahaman, I-Jung Wang, Kuan-Ming Chen, Denny Duan-Lee Tang, Hsu-Ming Hsiao, Sih-Han Li, Jeng-Hua Wei, Po-Shao Yeh, Chih-I Wu, H. Y. Lee |
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| Rok vydání: | 2021 |
| Předmět: |
Magnetoresistive random-access memory
Random access memory Materials science business.industry Process (computing) chemistry.chemical_element Hardware_PERFORMANCEANDRELIABILITY Tungsten CMOS chemistry Electrical resistivity and conductivity Hardware_INTEGRATEDCIRCUITS Optoelectronics Wafer business Communication channel |
| Zdroj: | 2021 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA). |
| Popis: | We’d built 8kb spin-orbit-torque (SOT) MRAM chips to evaluate our cell design and the process recipes to integrate them on CMOS wafer. For the SOT cell, the switching threshold is well correlated to the tungsten channel resistivity. We will show the cell design, integration process to CMOS wafers and the cell properties and array statistics. In this cell and array designs, we show the low switching current capability for the low power application and good thermal stability. |
| Databáze: | OpenAIRE |
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