Positive‐charge trapping in nitrided oxide and reoxidized nitrided oxide gate dielectrics

Autor:	B.J. Gross, K.S. Krisch, C. G. Sodini
Rok vydání:	1991
Předmět:	chemistry.chemical_compound Silicon Chemical physics Chemistry Oxide General Physics and Astronomy Relaxation (physics) chemistry.chemical_element Electric potential Dielectric Electric current Electric charge Nitriding
Zdroj:	Journal of Applied Physics. 70:2185-2194
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.349457
Popis:	The charge‐trapping characteristics of nitrided oxide and reoxidized nitrided oxide (ROXNOX) gate dielectrics following constant‐current stressing are studied, with an emphasis on the behavior of positive trapped charge. The positive charge is attributed to slow donor states, which are created and ionized during electrical stress. Slow donor states are shown to be responsible for a reversible, bias‐ and temperature‐dependent charge relaxation that is observed following electrical stress. The number of slow donor states created during stress is found to be a function of the nitridation and reoxidation conditions. Using optimized process conditions, ROXNOX dielectrics can be grown with essentially no slow donor states and, hence, with little relaxation.
Databáze:	OpenAIRE
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