Multiple scattering theory of the density of states in semiconductors
| Autor: | Jeremiah R. Lowney, Arnold H. Kahn |
|---|---|
| Rok vydání: | 1983 |
| Předmět: |
Condensed matter physics
Scattering Chemistry business.industry General Chemistry Electron Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Ionized impurity scattering Semiconductor Impurity Bound state Materials Chemistry Density of states business Anderson impurity model |
| Zdroj: | Solid State Communications. 46:229-233 |
| ISSN: | 0038-1098 |
| DOI: | 10.1016/0038-1098(83)90257-0 |
| Popis: | A method for calculating the electronic density of states of a semiconductor in the presence of impurity scattering is given. The approach is based on a low density multiple scattering expansion. The calculation treats the density of states of the conduction band, shifts of the band edge, and the profiles of the impurity bands. It is performed for a simple model, using a spherical well potential for the individual impurity centers, but could be extended to any scattering potential. The first impurity band forms when the potential is sufficiently strong that one center can bind an electron. The impurity bands are of finite width, have a flat upper edge, and an asymmetrically broadened tail on the low energy side. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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