| Autor: |
Akash Levy, Akhilesh Balasingam, Haitong Li, Priyanka Raina |
| Rok vydání: |
2020 |
| Předmět: |
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| Zdroj: |
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD). |
| DOI: |
10.23919/sispad49475.2020.9241659 |
| Popis: |
We developed a Monte Carlo simulator to compute the state-dependent I-V characteristics of three-terminal (3T) RRAM devices. State switching in these devices is modeled using a combination of vacancy migration and trap-assisted-tunneling mechanisms. We describe key elements of the simulator, compute hysteresis curves under typical voltage cycling conditions, and demonstrate agreement with experimental results. We then study the response of 2T- and 3T-RRAMs under pulsed operation and show that 3T-RRAM conductance values have both greater dynamic range than 2T-RRAMs and the potential to deliver superior inference accuracy in neuromorphic applications. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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