Effect of Gallium Interlayer in ZnO and Al-doped ZnO Thin Films
| Autor: | Chawalit Bhoomanee, Supab Choopun, Sanpet Nilphai, Pipat Ruankham, Sutthipoj Sutthana, Duangmanee Wongratanaphisan |
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| Rok vydání: | 2015 |
| Předmět: |
Materials science
Inorganic chemistry Oxide chemistry.chemical_element Sputter deposition Condensed Matter Physics Tin oxide Evaporation (deposition) Electronic Optical and Magnetic Materials Indium tin oxide chemistry.chemical_compound Chemical engineering chemistry Control and Systems Engineering Materials Chemistry Ceramics and Composites Electrical and Electronic Engineering Gallium Thin film Indium |
| Zdroj: | Integrated Ferroelectrics. 165:121-130 |
| ISSN: | 1607-8489 1058-4587 |
| Popis: | For applications in the field of optoelectronics, zinc oxide (ZnO) based transparent conducting oxide thin films such as aluminium-doped zinc oxide (AZO) have recently received much attention. It is one of the most promising alternative materials to the widely used indium tin oxide (ITO or tin-doped indium oxide) and fluorine-doped tin oxide (FTO). In this work, the ZnO and AZO base thin films were prepared by radio frequency (rf) magnetron sputtering technique using ZnO and AZO (1at%Al) ceramic target. The Ga interlayer films, added in between base thin films (ZnO and AZO), were deposited by evaporation technique. Both ZnO/Ga/ZnO and AZO/Ga/AZO multilayer thin film structures were grown on glass substrates. Then the obtained multilayer structures were annealed in argon (Ar) ambient at 400°C for 1 hr. The morphology, qualitative and quantitative elemental analysis, crystal structure, electrical properties, and optical properties of the multilayer thin films were characterized by field emission scanning el... |
| Databáze: | OpenAIRE |
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