| Autor: |
H. Hody, Andrea Fantini, S. H. Sharifi, Robin Degraeve, Thomas Witters, J. Van Houdt, D. Crotti, Ludovic Goux, Valery V. Afanas'ev, Gouri Sankar Kar, Daniele Garbin, T. Ravsher |
| Rok vydání: |
2021 |
| Předmět: |
|
| Zdroj: |
2021 IEEE International Memory Workshop (IMW). |
| DOI: |
10.1109/imw51353.2021.9439629 |
| Popis: |
Next-generation memory technologies utilizing crosspoint-array architecture require a two-terminal selector element with strong non-linearity, to suppress leakage currents. A promising candidate for this role is metal-semiconductor-metal (MSM) device, that relies on rectifying nature of Fowler-Nordheim tunneling process. In this paper, we report a detailed investigation of a breakdown mechanism of a-Si/a-Ge MSM selectors. For devices with integrated current-limiting series resistor it was found to be a non-destructive threshold switching effect, instead of a hard breakdown. The switching is field-triggered and current is area-independent after initial forming pulse, suggesting that it is closely related to ovonic threshold switching (OTS) phenomenon. Triggering current increases for thinner semiconductor and larger series resistance, providing a way to achieve higher maximum ON-current density. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
