Surface and interface states for GaAs(100) (1×1) and (4×2)‐c(8×2) reconstructions

Autor:	Jerry M. Woodall, I. M. Vitomirov, Shu Chang, George David Pettit, Adam C. Finnefrock, A. Raisanen, Peter D. Kirchner, R. E. Viturro, Leonard J. Brillson
Rok vydání:	1992
Předmět:	Materials science Passivation Annealing (metallurgy) Fermi level Thermal desorption Cathodoluminescence Surfaces and Interfaces Condensed Matter Physics Surfaces Coatings and Films symbols.namesake Chemical physics symbols Atomic physics Spectroscopy Surface reconstruction Surface states
Zdroj:	Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 10:749-753
ISSN:	1520-8559 0734-2101
Popis:	Low energy cathodoluminescence spectroscopy measurements of GaAs(100) surfaces prepared by thermal desorption of an As passivation layer reveal deep level transitions localized at the clean surfaces and metallized interfaces. These surface and interface state features extend from 0.7 to 1.3 eV and exhibit subtle differences between the As‐rich (1×1) and Ga‐rich (4×2)‐c(8×2) reconstructions. Both Au deposition and subsequent annealing induce additional deep level emissions which appear relatively unchanged between these two reconstructions. In contrast, Al deposition introduces new features which depend significantly upon starting surface stoichiometry and reconstruction. We discuss the formation and energies of these states in relation to reported variations in Fermi level stabilization. We conclude that surface stoichiometry and atomic bond configuration are a significant factor in formation and evolution of electrically active, deep level metal‐GaAs(100) interface states.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4460431625ee1e0641a46204b7916410 https://doi.org/10.1116/1.578157 Zobrazit plný text záznamu